Google researchers hack computers using DRAM electrical leaks

March 12, 2015


have written the first-ever attack code that takes advantage of between densely packed memory cells, a unique style of attack that could require changes in .

The work builds on a paper published last year by Carnegie Mellon University and Intel, which found it was possible to change binary values in stored memory by repeatedly accessing nearby memory cells, a process called “bit flipping.”

DRAM memory is vulnerable to such electrical interference because the cells are so closely packed together, a result of engineers increasing a chip’s memory capacity.

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